The MAAP-015030 two stage 8.5 to 11.75 GHz GaAs MMIC power amplifier has a saturated pulsed output power of 41 dBm, a large signal gain of 21 dB and 40% power added efficiency. The power amplifier can be biased using a direct gate voltage or using an on chip gate bias circuit providing an excellent bare die solution for high power X-Band applications.
The MAAP-015035 is a three stage 8.5 to 11.5 GHz GaAs pHEMT MMIC power amplifier capable of achieving a saturated pulsed output power of 41 dBm and a small signal gain of 36 dB. The gate terminals of the power amplifier can be biased directly using a direct gate voltage or using an on chip gate bias circuit. The chip provides 40 % power added efficiency and offers very high gain which eliminates the need for a driver amplifier in customers’ circuits.
According to the company, the versatile biasing options and wide-band operation make the devices ideal for a wide range of X-band applications such as marine, weather and surface-movement radar, as well as perimeter security and communication links.