Process design kit for GaN on SiC

July 30, 2014 // By Jean-Pierre Joosting
Cree has released a process design kit (PDK) that combines the latest version of Agilent Technologies’ Advanced Design System (ADS) software with Cree’s proprietary GaN on SiC process technology parameters and design rules.

Available free of charge, the Cree® GaN PDK V4.01 is an integrated front-to-back system that provides microwave and RF design engineers with a comprehensive suite of design and simulation tools that helps accelerate their time to market.

The updated software features expanded layout and modeling options and enhanced rule-checking processes for improved design-to-build accuracy. Specifically, PDK V4.01 adds integrated support for: G50V3 (50-V, 0.4-µm), G28V4 (28-V, 0.25-µm), and G40V4 (40-V, 0.25-µm) device technologies; V3 and V4 passive switch HEMTs; and the Cree standard dielectric crossover.

The software also offers dual design panels — one for V3 and one for V4 — to support streamlined design with either technology, updated bulk resistor layouts and models to reflect current process and design requirements, and updated layout design rule checks (DRCs) to thoroughly and accurately verify requirements. Further, V4.01 corrects many of the inconveniences users noted in the previous PDK release.

To request access to the GaN PDK V4.01, please visit