When signal integrity and performance are a critical component of system functionality, the higher the isolation figure, the better the overall performance will be. These latest PIN diode switches feature very high port-to-port isolation of greater than 90 dB at 1-2 GHz, 80 dB at 2-4 GHz and 75 dB at 6-12 GHz. Insertion loss of the high isolation switches varies between 1.0 dB and 2.5 dB depending upon the frequency and switching speed performance ranges from 35 and 75 nanoseconds.
These RF switches are designed with complementary-metal–oxide–semiconductor (CMOS) transistor–transistor logic (TTL) drivers, and are fully matched internally for 50 Ohm input and output, which eliminates the customers need for any additional sensitive RF tuning components.
The company's hi-rel PIN diode switches are housed in SMA-connectorized casings that are built to withstand a wide operating temperature range of -54 to +85 °C making them ideal for use in many common defense and commercial applications. These particular PIN diode switches are also constructed to meet typical military specifications in areas such as vibration, shock, temperature and humidity.