The high gain amplifier modules are optimized for 1.2 to 1.4 GHz and 3.1 to 3.5 GHz radar applications, packaged in hermetically-sealed metal enclosures and exhibit outstanding performance in high gain, gain flatness, high output power and low noise.
These RF amplifiers utilize a hybrid microwave integrated circuit design and advanced GaAs pHEMT technology to produce an unconditionally stable module. They are also designed with built-in voltage regulation, bias sequencing, and reverse bias protection for added reliability and over-voltage protection is installed externally for easy repair.
A total of six L and S band high gain amplifiers are offered. Two of these products are low noise amplifiers (LNA) which demonstrate noise figure performance of 1.1 dB to 1.5 dB at high gain levels of 40 dB typical gain while also exhibiting excellent gain flatness. Also offered are 10 W and 20 W high power amplifiers that have gain performance of 40 to 47 dB with 1.0 dB to 1.5 dB gain flatness. The company is also releasing an L-band driver amplifier that displays solid gain performance of 47 dB while delivering competitive gain flatness of 1.5 dB.