High-gain, 45-W, S-band GaN transistors

July 23, 2014 // By Jean-Pierre Joosting
RFMW has announced design and sales support for two 45-W GaN on SiC transistors from TriQuint.

The T1G4004532-FL (flanged) and T1G4004532-FS (earless) are wideband, DC to 3.5 GHz devices offering 17 dB of gain, nearly twice that of competing GaN devices.

Both transistors are input matched for S-band operation and both the T1G4004532-FL and T1G4004532-FS operate from a 32-V supply. Manufactured on TriQuint’s TQGan25 process, the devices utilize a low thermal resistance base material and are housed in industry standard packaging for use in radar, EW and general purpose, wideband applications.

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