GaN on SiC transistor provides high gain and efficiency for L-Band radar

August 06, 2014 // By Jean-Pierre Joosting
M/A-COM Technology Solutions has introduced a GaN on SiC HEMT power transistor for L-Band pulsed radar applications.

The MAGX-001214-650L00 is a gold-metalized pre-matched GaN on Silicon Carbide transistor that claims to offer the highest peak power in the industry for a single-ended power transistor optimized for pulsed L-Band radar applications. It guarantees 650 W of peak power with a typical 19.5 dB of gain and 60% efficiency. The device also boasts very high breakdown voltages which allow customers reliable and stable operation at 50 V under more extreme load mismatch conditions.

The power transistor is assembled in a high performance ceramic flange package and has undergone the company’s rigorous qualification and reliability testing, which offers customers state of the art power with rugged performance that is ideally suited to today’s demanding radar applications.

Paul Beasly, Product Manager comments, “The device is an ideal candidate for customers looking to combine two power transistors and realize over 1,000 W of peak power in a single pallet for next generation L-Band radar systems that require increased performance in smaller footprints.”

Operating between the 1200 MHz to 1400 MHz frequency range, the MAGX-001214-650L00 is a highly robust transistor, boasting a mean time to failure (MTTF) of 5.3x10 6 hours.