Exhibiting high efficiency, high gain, and wide bandwidth capabilities, in addition to high power density, low parasitics, and high current gain cutoff frequency (FT), the 30-W CGHV40030 and 100-W CGHV40100 significantly improve the efficiency and bandwidth capabilities of multi-octave to instantaneous bandwidth amplifiers and a wide range of L- and S-Band products. Further, both the 30-W and 100-W 50-V GaN transistors are available in a two-leaded flange or pill package.
The CGHV40030 transistor features 30-W typical output power, up to 6 GHz operation, 16 dB gain at 1.2 GHz, and a 0.96 to 1.4 GHz broadband reference design, which makes it well suited for use in a wide variety of L-, S-, and C-Band amplifier applications.
The CGHV40100 transistor offers a general purpose, broadband solution for a variety of RF and microwave applications, but is especially well suited for linear and compressed amplifier circuits. It features 100 W typical output power, up to 3 GHz operation, 18 dB small signal gain at 2.0 GHz, and a 0.5 to 2.5 GHz broadband reference design. The 100-W GaN transistor also demonstrates 55% efficiency at PSAT.