Further, the technology increases reliability for GaN-on-Si, with more than one million hours (114 years) mean time to failure (MTTF) at an operating junction temperature of 230 °C using a stringent 10% drift failure criteria. In addition, improvements in thermal management in initial 48 V products have demonstrated thermal resistance reduction of more than 40% compared to existing Nitronex products.
Ray Crampton, VP of Engineering comments, "In addition to increased reliability and RF performance, we have demonstrated robustness to 15:1 output VSWR at all angles at 90 °C flange temperature under saturated drive conditions."
The company's patented SIGANTIC GaN-on-Si process claims to be the only production-qualified GaN process using an industry standard 4 inch silicon substrate. This results in a robust, scalable supply chain and positions Nitronex well for the growth expected from emerging GaN markets such as military communications, CATV, RADAR, commercial wireless, satellite communications and point to point microwave.
Additional technology under development includes a 48 V MMIC process platform. Initial 48 V samples are available now with pre-production and production quantities available in early 2012.
For further information: www.nitronex.com.