150 W GaN on SiC HEMT power transistor

February 12, 2014 // By Jean-Pierre Joosting
M/A-COM Technology Solutions has announced a GaN on SiC HEMT power transistor for pulsed power applications.

The MAGX-000025-150000 is a gold-metalized unmatched GaN on Silicon Carbide RF power transistor optimized for a variety of RF power amplifier applications. It provides 150 W of output power with 18 dB of gain and 58% efficiency. The device also boasts very high breakdown voltages, which allows for reliable and stable operation at more extreme load mismatch conditions. The HEMT power transistor is offered in a four lead, Gemini package which allows for very broadband match with high performance.

“The 150 W power transistor in a Gemini style package offers the user incredible flexibility in operation. The device can be configured in a push-pull configuration for wideband, low distortion operation or operated in single-ended mode for a smaller size form factor,” said Paul Beasly, Product Manager.

Operating between the 1 to 2,500 MHz frequency range, the MAGX-000025-150000 is a highly robust transistor, boasting a mean time to failure (MTTF) of 600 years.

Other features include an efficiency of 58 percent, load mismatch stability VSWR-S of 5:1, and a load mismatch tolerance VSWR-T of 10:1. Pulse droop is 0.2 dB