February 29, 2012 RF Micro Devices has expanded its family of PowerSmart® power platforms to include multiple 3G and 4G LTE PowerSmart product variants. PowerSmart power platforms are at the forefront of the technology shift to converged front ends in multimode, multi-band applications, including smartphones, tablets, and other data-centric mobile broadband devices. Read more

February 27, 2012 RF Micro Devices has expanded its ultra-high efficiency power amplifier (PA) product portfolio to include six 4G LTE PAs. These PAs deliver superior peak efficiency and current consumption in LTE mode and complement the company's first-generation family of ultra-high efficiency PAs for WCDMA applications. Read more

December 14, 2011 The RF1293 and RF1293A switch filter modules from RFMD offer very low insertion loss along with excellent linearity performance and are ideal for multi-mode GSM, EDGE, LTE, and UMTS handset applications. Read more

November 29, 2011 The RFSA4013 and RFSA4023 from RFMD are fully monolithic analog Temperature-Compensating Attenuators (TCAs) featuring exceptional linearity over their entire gain control range. These TCAs are designed to offset the gain reduction of an RF component over temperature without the need for closed loop feedback. Read more

November 23, 2011 The RF1604D from RFMD is a single-pole four-throw (SP4T) switch designed for receive diversity switching applications. The switch is ideally suited for battery-operated applications requiring high performance switching with very low DC power consumption. Read more

November 8, 2011 The RFPP2870 SOT115J push-pull amplifier, from RFMD, features 28 dB minimum gain at 1003 MHz, with excellent distortion characteristics and optimal reliability, all in an industry standard SOT-115J package. Read more

October 25, 2011 The RF3826 wideband power amplifier from RFMD is designed for continuous wave and pulsed applications such as wireless infrastructure, RADAR, two-way radios, and general purpose amplification. Read more

October 20, 2011 Delivering wideband operation from 2.8 GHz to 3.4 GHz, the RF3928 from RFMD is a 50 V 280 W high power discrete amplifier designed for S-Band pulsed radar, Air Traffic Control and Surveillance (ATCS), and general purpose broadband amplifier applications. Read more

October 12, 2011 RF Micro Devices is implementing a strategic initiative to extend RFMD's industry leadership in compound semiconductor technologies into a broad array of adjacent non-RF growth markets. The strategic initiative includes the formation of a new business group, the Compound Semiconductor Group (CSG), which will operate alongside RFMD's Cellular Products Group (CPG) and RFMD's Multi-Market Products Group (MPG). Read more

August 29, 2011 RFMD's latest RFHA1023 is a 36 V 225 W high power discrete amplifier designed for L-Band pulsed radar, air traffic control and surveillance, and general purpose broadband amplifier applications. The RFHA1023 is a high terminal impedance matched power transistor providing 225 W with 55 percent drain efficiency, packaged in a hermetic, flanged ceramic package that provides excellent thermal stability with advanced heat sink and power dissipation technologies. Read more

July 20, 2011 RF Micro Devices has announced its Foundry Services business unit has expanded its portfolio of process technologies to include two additional GaAs process technologies — RFMD's FD25 low noise pHEMT process and RFMD's FET1H switching pHEMT process. The two additional GaAs pHEMT process technologies are available immediately to foundry customers. Read more

April 6, 2011 RFMD's latest RF1604 single-pole four-throw (SP4T) switch is designed for switching applications requiring very low insertion loss and high power handling capability with minimal DC power consumption. Its excellent linearity performance makes it ideal for use in multimode GSM/EDGE/WCDMA and LTE applications. Read more

March 9, 2011 RF Micro Devices has announced the expansion of its leading 5-GHz WiFi product portfolio to include three new 5-GHz high-band WiFi front end modules (FEMs) with integrated power amplifiers (PAs). Read more

February 22, 2011 RF Micro Devices has announced the addition of four products to RFMD's expanding portfolio of front end modules for 3G/4G switch and signal conditioning applications. Read more

January 12, 2011 RF Micro Devices has announced it has achieved a major performance milestone related to its PowerSmart™ power platforms — a new product category reshaping the future of multimode, multi-band cellular RF architectures. Read more

December 8, 2010 RFMD's RFRX8888 video receiver performs transimpedance amplification of the differential input from a high performance 1550 nm optical wavelength photo detector (PD), all with best-in-class noise performance. This IC's output is linear low distortion RF from 48 MHz to 1002 MHz. Read more

December 1, 2010 RFMD's newly introduced RF6535 ZigBee front end module (FEM) has been combined with Freescale's MC1321x System-in-Package (SiP) to create the RF6535/MC1321x reference design. The RF6535/MC1321x reference design claims to simplify RF design requirements, and reduce cost and complexity. It targets IEEE 802.15.4 designs/ZigBee Smart Energy and Home Area Network (HAN) applications. Read more

November 29, 2010 Nujira has announced the release of its first PA platform for military communications, halving the power dissipation for a transmitter covering an entire frequency octave. Such a transmitter can be built using just using just one PA device together with a Coolteq power modulator module. Read more

November 16, 2010 3G/4G/LTE cellular infrastructure, wireless backhaul and WiMAX are the target of RF Micro Devices' RFSA2614 and the RFSA2624. Said to be optimised for operation across multiple market segments, the digital step attenuators (DSAs) deliver a settling time of 200ns, as well as a P1dB (1 dB compression point) of 27dBm and a IIP3 (3rd-order intercept point) of +48dBm. Read more

November 2, 2010 RF Micro Devices has announced that it has been awarded a $1.5 million R&D contract by the Office of Naval Research (ONR) related to gallium nitride (GaN) microelectronics, including the development of materials, device fabrication and high power circuits. Read more

October 19, 2010 RF Micro Devices has announced the RFPD2650, a gallium nitride-based hybrid power doubler amplifier that delivers industry-best low distortion performance with the flexibility to optimize for supply current or energy consumption. The hybrid power doubler amplifier module is specifically designed for CATV infrastructure applications including hybrid fiber coaxial (HFC) optical nodes. Read more

October 14, 2010 RF Micro Devices has announced that RFMD® has qualified and production released the RF3934, a 140-W highly-efficient gallium nitride (GaN) RF unmatched power transistor (UPT) with superior performance versus competing GaAs and silicon power technologies. Read more

October 7, 2010 RF Micro Devices (RFMD) has added the RFUV5945A I/Q up-converter to its rapidly growing portfolio of components for microwave and millimeter wave radio applications. It is ideally suited for a variety of end markets, including point-to-point microwave radio, military radio, VSAT, and test and measurement. Read more

October 7, 2010 RF Micro Devices (RFMD) has added its world-class Gallium Arsenide (GaAs) technology to its foundry services portfolio and will begin providing a full suite of GaAs Pseudomorphic High Electron Mobility Transistor (pHEMT) technologies to customers of its Foundry Services business unit. Read more

July 13, 2010 RF Micro Devices has announced the RF5365 WiFi front end module (FEM). This highly integrated FEM satisfies the need for aggressive size reductions for typical 802.11b/g front-end designs and greatly reduces the number of components outside the core chipset. Read more

May 26, 2010 IEEE MTT-S International Microwave Symposium 2010 — RF Micro Devices has announced the successful qualification of RFMD's second high-power Gallium Nitride (GaN) process technology, expanding the company's industry-leading portfolio of compound semiconductor technologies. Read more

May 18, 2010 RF Micro Devices has added high power Integrated Passive Component (IPC) technology to its foundry services portfolio and will begin providing IPC technology to customers of its Foundry Services business unit in June of this year. Read more

May 5, 2010 RF Micro Devices claims the industry's first 1.2 GHz broadband transmission products, enabling enhanced, bandwidth-driven services for CATV operators and their subscribers. Read more

April 13, 2010 RF Micro Devices has announced the introduction of the ML2730, a single-chip fully integrated Frequency Shift Keyed (FSK) transceiver with integrated power amplifier (PA) and low noise amplifier (LNA). The device expands RFMD's portfolio of ISM band single-chip transceivers, covering 900 MHz, 2.4 GHz and 5.8 GHz. Read more

February 25, 2010 The RF720x WCDMA/HSPA+ power amplifier (PA) family from RF Micro Devices has entered into high volume production. Read more