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Broadband power amplifier designed for laboratory test applications May 13, 2013
Amplifier Technology has introduced a new broadband power amplifier in standard rack format, designed for laboratory applications. Covering the 500 MHz to 2.5 GHz frequency range, the 8865 rack amplifier meets the needs of laboratory test applications where wide bandwidth, high gain, high linearity and high power are important.
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GaN on SiC HEMT pulsed power transistor targets L-Band pulsed radar
May 6, 2013
M/A-COM Technology Solutions has introduced a GaN on SiC HEMT power transistor for L-Band pulsed radar applications.
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GaN Systems to use RFMD foundry production
March 20, 2013
GaN Systems has announced that production of their GaN on SiC devices would be carried out using RFMD’s GaN on SiC foundry processes.
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Cree and Acal BFi sign GaN RF franchise agreement
February 7, 2013
Cree and Acal BFI have signed a franchise agreement, to increase the sale of Cree RF components in Italy, Spain, Germany, Poland, Czech Republic, The Netherlands, Norway, Sweden, Hungary and Luxemburg.
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Latest release of the IC-CAP platform for device characterization and modeling
December 20, 2012
Agilent Technologies has announced the latest release of its device modeling software platform, the Integrated Circuit Characterization and Analysis Program (IC-CAP).
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TriQuint achieves record GaN reliability performance
TriQuint Semiconductor claims record-setting gallium nitride (GaN) circuit reliability that exceeds previous industry standards.
S-band RF power transistor for air traffic control radar applications
GaN power transistors provide superior linear performance
RF Micro Devices has released two linear gallium nitride (GaN) RF unmatched power transistors (UPTs), the RFHA3942 (35 W) and RFHA3944 (65 W), that deliver superior linear performance versus competing GaN transistors.
30 W DC to 6 GHz GaN on SiC RF power transistors
Richardson RFPD is now stocking and offering full design support capabilities for a new 30-W (P3dB), DC to 6 GHz, discrete GaN on SiC high electron mobility transistor (HEMT) from TriQuint Semiconductor.
RFMD unveils multiple GAN-based amplifiers for cable applications
RF Micro Devices has unveiled multiple leading-edge GaN-based CATV amplifiers which include the RFPD2940 – a best-in-class, high-power GaN-based CATV power-doubler amplifier, as well as a new family of GaN-based push-pull CATV amplifiers, led by the RFPP2870 and RFCM3080.
GaN on SiC-based RF transistor targets secondary surveillance radar aviation applications
Microsemi Corporation has released the first in a family of RF transistors for high-power air traffic control (ATC), secondary surveillance radar (SSR) applications.
Richardson RFPD launches the TriQuint GaN Tech Hub
The TriQuint GaN Tech Hub micro-website launched by distributor Richardson RFPD features the latest news on gallium nitride (GaN) innovations and product releases from TriQuint Semiconductor.
Prototype high efficiency GaN power amplifier on Si substrate targets base stations
Mitsubishi Electric Corporation has developed a prototype high-output, high-efficiency 2 GHz power amplifier for mobile communications base stations.
Verilog-A RF device models to help GaN adoption in 4G/LTE infrastructure
GaN goes mainstream as costs drop
Recognized as a compelling alternative to silicon for many RF applications, GaN (gallium nitride) technology has generated significant industry interest due to its performance advantages, but has faced significant challenges related to cost — until now.
GaN MMIC amplifier and GaN power transistor pack more power
TriQuint Semiconductor is announcing three gallium nitride (GaN) MMIC RF power amplifiers that combine high gain and broad bandwidths for commercial and defense applications. The company is also announcing a high-power GaN RF transistor that combines high gain and efficiency, allowing designers to simplify amplifier circuits by reducing the number of driver stages by up to 50%.
9-W GaN wideband power amplifier covers 225 MHz to 1215 MHz
High voltage GaN transistors deliver high power
A range of European manufactured Gallium Nitride (GaN) high electron mobility transistors is available from UK specialist RF and microwave component distributor, Admiral Microwaves. These high voltage (50-V), unmatched devices are aimed at a variety of general purpose and broadband RF power applications, including radar and telecommunications systems. The GaN HEMT process enables stable power outputs at higher voltages.
Broadband amplifier covers 0.5 GHZ- 2.5 GHZ for EW and aerospace applications
Amplifier Technology Ltd., has announced the latest addition to its product range: the 8817 broadband amplifier which operates across a wide spectrum, covering all frequencies between 0.5 GHz and 2.5 GHz.
TriQuint wins $12.3M GaN DARPA contract to develop ultra-fast power switch technology
TriQuint Semiconductor has been selected by the Defense Advanced Research Projects Agency (DARPA) to lead a $12.3 million development program focused on ultra-fast gallium nitride (GaN) switch technology for the Microscale Power Conversion (MPC) program. TriQuint’s revolutionary GaN modulator has the potential to enable highly-efficient RF transmitters substantially smaller than current solutions.
RF Micro Devices unveils rGaN-HV process technology
RF Micro Devices has announced the extension of RFMD's industry-leading GaN process technology portfolio to include a new technology optimized for high voltage power devices in power conversion applications.
30-W, 2.5-6-GHz GaN PA delivers 35% PAE for wide-ranging applications
TriQuint Semiconductor has released a packaged, 30 W wideband gallium nitride (GaN) power amplifier with high power and efficiency for communications, defense and related applications. The TGA2576-FL delivers 30 W of output power (45.5 dBm) across the 2.5-6 GHz frequency range.
48-V GaN-on-Si process enables cool high reliablility RF devices
NRF2 from Nitronex is a 48 V GaN-on-Si process platform that delivers double the power density, 1 to 2 dB higher gain, improved broadband performance, higher breakdown voltage and higher supply voltage operation over the company's 28 V NRF1 process technology.
High gain GaN CATV hybrid amplifier features low distortion
The RFPP2870 SOT115J push-pull amplifier, from RFMD, features 28 dB minimum gain at 1003 MHz, with excellent distortion characteristics and optimal reliability, all in an industry standard SOT-115J package.
GaN wideband power amplifier covers 30 MHz to 2500 MHz
The RF3826 wideband power amplifier from RFMD is designed for continuous wave and pulsed applications such as wireless infrastructure, RADAR, two-way radios, and general purpose amplification.
GaN wideband pulsed power amplifier covers 2.8 GHz to 3.4 GHz
Delivering wideband operation from 2.8 GHz to 3.4 GHz, the RF3928 from RFMD is a 50 V 280 W high power discrete amplifier designed for S-Band pulsed radar, Air Traffic Control and Surveillance (ATCS), and general purpose broadband amplifier applications.
18 W GaN on SiC HEMT operates over DC to 6 GHz
RF Micro Devices creates new Compound Semiconductor Group
RF Micro Devices is implementing a strategic initiative to extend RFMD's industry leadership in compound semiconductor technologies into a broad array of adjacent non-RF growth markets. The strategic initiative includes the formation of a new business group, the Compound Semiconductor Group (CSG), which will operate alongside RFMD's Cellular Products Group (CPG) and RFMD's Multi-Market Products Group (MPG).
Amplifier Technology unveils compact, high power broadband pallet amplifiers
Bristol-based RF design specialist, Amplifier Technology Ltd has developed a new range of compact broadband pallet amplifiers which will be shown for the first time at the DSEi exhibition in London in September 2011. The pallet amplifiers use GaN technology, and there are three models covering different frequency bands.
Wafer maker joins GaN-on-Si research
Wafer maker Siltronic AG has joined a research program organized by IMEC to develop gallium-nitride-on-silicon wafers.
GaN power amplifier module that delivers high output and low distortion for CATV applications using the 1-GHz Band
Renesas Electronics has developed a gallium nitride (GaN) power amplifier module for 1-GHz CATV systems. Designed for use as a power amplifier for applications such as trunk amplifiers for CATV systems, the MC-7802 achieves high output power and low distortion that is claimed to be among the best in the industry.
TriQuint demonstrates GaN leadership by achieving key development milestones
TriQuint Semiconductor has announced several milestones related to its industry leading Gallium Nitride (GaN) developments.Together with customers and various US Government agencies, TriQuint is working to define the future of RF, where it believes GaN will play a key role.
Nitronex claims smallest broadband 5-W PA solution
M/A-COM Technology unveils portfolio of GaN-based RF power transistors
M/A-COM Technology Solutions has introduced a family of Gallium Nitride (GaN) RF power transistors, which targets L- and S-Band pulsed radar applications and applies the company's experience of providing both standard and custom solutions to meet the most demanding customer requirements.
Microsemi expands S-band RF power transistor family to embrace high-performance GaN-on-SiC devices
NXP provides live demo of next-generation GaN technology
NXP Semiconductors N.V. is showcasing at IMS2011 a live demo of its next-generation products based on Gallium Nitride (GaN) technology. The GaN demo includes a 50-W wideband amplifier, the CLF1G0530-50, covering 500 to 3000 MHz; 2.1-GHz and 2.7-GHz Doherty power amplifiers for base stations; and a 100-W amplifier, the CLF1G2535-100, covering 2.5 - 3.5 GHz.
IMEC makes GaN-on-silicon
European research institute IMEC and its partners in a program on gallium-nitride fabrication have produced device quality GaN/AlGaN layers on 200-mm silicon wafers.
100 W broadband high power amplifier features small form factor
Model 1189 from Empower RF Systems is a recent addition to the company's portfolio of building block designs incorporating the latest GaN device technologies and control functionality.
Pocket-sized broadband amplifier covers wide 20 MHz to 6.0 GHz range
Amplifier Technology Ltd has developed a compact broadband amplifier, model number 8790, which operates at the higher frequencies used by WiMAX, 3G and 4G phones. The 8790 can be integrated into a variety of systems, for different applications. It is suitable for jamming or for laboratory testing, or could be used to drive other RF devices.
100-W broadband amplifier operates at 0.5 to 2.5 GHz
Portable GaN amplifier for personal protection covers 2.5 GHz to 6.0 GHz.
Amplifier Technology has announced its latest portable amplifier, the 8780 lightweight broadband power amplifier with GaN technology, which spans all frequencies from 2.5 GHz to 6.0 GHz. Typical applications include personal protection and to counter the threat of IEDs.
TriQuint wins $17.5M GaN manufacturing contract
TriQuint Semiconductor has been awarded a Defense Production Act Title III gallium nitride (GaN) manufacturing development contract by the US Air Force Research Laboratory (AFRL). The overall goal of the contract is to increase yield, lower costs and improve time-to-market cycles for defense and commercial GaN integrated circuits.
RF Micro Devices awarded $1.5 million Navy contract for GaN RF power technology
GaN PA is ideal for EW and defense systems
TriQuint Semiconductor has released a 30 W state-of-the-art gallium nitride (GaN) power amplifier with high power and efficiency for counter-IED (C-IED) and other EW (electronic weapons) systems.
20 W GaN PA offers high power and efficiency
Hybrid power doubler amplifier module delivers power savings and design flexibility for CATV
GaN unmatched power transistor outperforms GaAs and silicon in high power amplifiers
TriQuint names VIPER RF as design resource
TriQuint awarded contract by US Air Force Research Laboratories to develop GaN modules
IEEE MTT-S International Microwave Symposium 2010 — TriQuint Semiconductor has announced that it has been awarded a contract by the US Air Force Research Laboratories (AFRL) to develop new Gallium Nitride (GaN) modules for unmanned aerial vehicles (UAVs). TriQuint's new GaN devices will extend the range and capabilities of UAVs that are used for reconnaissance missions over Afghanistan, Iraq and other regions.
RFMD® announces qualification of second Gallium Nitride (GaN) process technology
GaN HEMT MMIC power amplifiers expand frequency range through X-band
RFMD expands foundry services to include high power integrated passive technology
Nitronex and Modelithics release enhanced non-linear gallium nitride device model
1.2 GHz broadband products enhance bandwidth-driven services for CATV
GaN-based military RF power amplifier delivers 100 W from 20 to 305 MHz
BC Systems has introduced the Model RF40015, an RF power amplifier designed for defense applications in which broadband frequency coverage of 20 to 305 MHz and RF output power of at least 100 W in Class AB operation is desired in a compact, rugged package.
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