November 18, 2011 NRF2 from Nitronex is a 48 V GaN-on-Si process platform that delivers double the power density, 1 to 2 dB higher gain, improved broadband performance, higher breakdown voltage and higher supply voltage operation over the company's 28 V NRF1 process technology. Read more

November 8, 2011 The RFPP2870 SOT115J push-pull amplifier, from RFMD, features 28 dB minimum gain at 1003 MHz, with excellent distortion characteristics and optimal reliability, all in an industry standard SOT-115J package. Read more

October 25, 2011 The RF3826 wideband power amplifier from RFMD is designed for continuous wave and pulsed applications such as wireless infrastructure, RADAR, two-way radios, and general purpose amplification. Read more

October 20, 2011 Delivering wideband operation from 2.8 GHz to 3.4 GHz, the RF3928 from RFMD is a 50 V 280 W high power discrete amplifier designed for S-Band pulsed radar, Air Traffic Control and Surveillance (ATCS), and general purpose broadband amplifier applications. Read more

October 19, 2011 TriQuint Semiconductor has launched the T1G6001528-Q3, a 18 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz. Read more

October 12, 2011 RF Micro Devices is implementing a strategic initiative to extend RFMD's industry leadership in compound semiconductor technologies into a broad array of adjacent non-RF growth markets. The strategic initiative includes the formation of a new business group, the Compound Semiconductor Group (CSG), which will operate alongside RFMD's Cellular Products Group (CPG) and RFMD's Multi-Market Products Group (MPG). Read more

August 30, 2011 Bristol-based RF design specialist, Amplifier Technology Ltd has developed a new range of compact broadband pallet amplifiers which will be shown for the first time at the DSEi exhibition in London in September 2011. The pallet amplifiers use GaN technology, and there are three models covering different frequency bands. Read more

July 4, 2011 Wafer maker Siltronic AG has joined a research program organized by IMEC to develop gallium-nitride-on-silicon wafers. Read more

June 27, 2011 Renesas Electronics has developed a gallium nitride (GaN) power amplifier module for 1-GHz CATV systems. Designed for use as a power amplifier for applications such as trunk amplifiers for CATV systems, the MC-7802 achieves high output power and low distortion that is claimed to be among the best in the industry. Read more

June 8, 2011 TriQuint Semiconductor has announced several milestones related to its industry leading Gallium Nitride (GaN) developments.Together with customers and various US Government agencies, TriQuint is working to define the future of RF, where it believes GaN will play a key role. Read more

June 7, 2011 Nitronex has developed what the company claims is the industry's smallest broadband 5 W power amplifier. The NPA1003, a GaN PA MMIC features a 4 mm x 4 mm thermally-enhanced QFN package with RF input and output matched to 50 ohms. Highly integrated, the NPA1003 GaN MMIC only requires an external resistor and inductor to provide bias. With output power more than 5 W from 20 to 1500 MHz and typical efficiency of over 50%, the overall solution size is less than 0.25 square inches, smaller than any competing solution. Read more

June 7, 2011 M/A-COM Technology Solutions has introduced a family of Gallium Nitride (GaN) RF power transistors, which targets L- and S-Band pulsed radar applications and applies the company's experience of providing both standard and custom solutions to meet the most demanding customer requirements. Read more

June 6, 2011 Microsemi Corporation has expanded the company's family of S-band RF power transistors to include devices that use advanced gallium nitride (GaN) process technology on a silicon carbide (SiC) substrate. The company's GaN-on-SiC high-pulsed power transistors deliver industry-leading peak power and power gain for radar systems operating in the 2.7 GHz to 3.5 GHz frequency band. Read more

June 6, 2011 NXP Semiconductors N.V. is showcasing at IMS2011 a live demo of its next-generation products based on Gallium Nitride (GaN) technology. The GaN demo includes a 50-W wideband amplifier, the CLF1G0530-50, covering 500 to 3000 MHz; 2.1-GHz and 2.7-GHz Doherty power amplifiers for base stations; and a 100-W amplifier, the CLF1G2535-100, covering 2.5 - 3.5 GHz. Read more

May 26, 2011 European research institute IMEC and its partners in a program on gallium-nitride fabrication have produced device quality GaN/AlGaN layers on 200-mm silicon wafers. Read more

May 11, 2011 Model 1189 from Empower RF Systems is a recent addition to the company's portfolio of building block designs incorporating the latest GaN device technologies and control functionality. Read more

April 18, 2011 Amplifier Technology Ltd has developed a compact broadband amplifier, model number 8790, which operates at the higher frequencies used by WiMAX, 3G and 4G phones. The 8790 can be integrated into a variety of systems, for different applications. It is suitable for jamming or for laboratory testing, or could be used to drive other RF devices. Read more

January 14, 2011 Amplifier Technology has unveiled a high powered amplifier, operating at 100 W in the 0.5 – 2.5 GHz frequency range. The 8767 is a broadband GaN amplifier which gives a saturated output power of 50 dBm minimum, from an input power of 0 dBm maximum. Read more

December 8, 2010 Amplifier Technology has announced its latest portable amplifier, the 8780 lightweight broadband power amplifier with GaN technology, which spans all frequencies from 2.5 GHz to 6.0 GHz. Typical applications include personal protection and to counter the threat of IEDs. Read more

December 1, 2010 TriQuint Semiconductor has been awarded a Defense Production Act Title III gallium nitride (GaN) manufacturing development contract by the US Air Force Research Laboratory (AFRL). The overall goal of the contract is to increase yield, lower costs and improve time-to-market cycles for defense and commercial GaN integrated circuits. Read more

November 2, 2010 RF Micro Devices has announced that it has been awarded a $1.5 million R&D contract by the Office of Naval Research (ONR) related to gallium nitride (GaN) microelectronics, including the development of materials, device fabrication and high power circuits. Read more

November 2, 2010 TriQuint Semiconductor has released a 30 W state-of-the-art gallium nitride (GaN) power amplifier with high power and efficiency for counter-IED (C-IED) and other EW (electronic weapons) systems. Read more

November 1, 2010 TriQuint Semiconductor has released a state-of-the-art gallium nitride (GaN) power amplifier with high power and efficiency for defense and commercial communications. Read more

October 19, 2010 RF Micro Devices has announced the RFPD2650, a gallium nitride-based hybrid power doubler amplifier that delivers industry-best low distortion performance with the flexibility to optimize for supply current or energy consumption. The hybrid power doubler amplifier module is specifically designed for CATV infrastructure applications including hybrid fiber coaxial (HFC) optical nodes. Read more

October 14, 2010 RF Micro Devices has announced that RFMD® has qualified and production released the RF3934, a 140-W highly-efficient gallium nitride (GaN) RF unmatched power transistor (UPT) with superior performance versus competing GaAs and silicon power technologies. Read more

September 29, 2010 VIPER RF has announced that it has entered into a co-marketing agreement with TriQuint, a leading RF product manufacturer and foundry services provider. Under the agreement VIPER RF will offer design support and specialised RF expertise to help customers develop chips using TriQuint's process technologies and design tools. Read more

May 27, 2010 IEEE MTT-S International Microwave Symposium 2010 — TriQuint Semiconductor has announced that it has been awarded a contract by the US Air Force Research Laboratories (AFRL) to develop new Gallium Nitride (GaN) modules for unmanned aerial vehicles (UAVs). TriQuint's new GaN devices will extend the range and capabilities of UAVs that are used for reconnaissance missions over Afghanistan, Iraq and other regions. Read more

May 26, 2010 IEEE MTT-S International Microwave Symposium 2010 — RF Micro Devices has announced the successful qualification of RFMD's second high-power Gallium Nitride (GaN) process technology, expanding the company's industry-leading portfolio of compound semiconductor technologies. Read more

May 21, 2010 Providing RF design engineers with the largest commercially available family of wide bandgap MMIC products, Cree has developed five new GaN HEMT MMIC amplifiers that increase the range of frequencies available through X-Band. Read more

May 18, 2010 RF Micro Devices has added high power Integrated Passive Component (IPC) technology to its foundry services portfolio and will begin providing IPC technology to customers of its Foundry Services business unit in June of this year. Read more

May 10, 2010 Nitronex and Modelithics have released the first state-of-the-art non-linear model for Nitronex's high power gallium nitride (GaN) NPT1012 device. Read more

May 5, 2010 RF Micro Devices claims the industry's first 1.2 GHz broadband transmission products, enabling enhanced, bandwidth-driven services for CATV operators and their subscribers. Read more

March 29, 2010 BC Systems has introduced the Model RF40015, an RF power amplifier designed for defense applications in which broadband frequency coverage of 20 to 305 MHz and RF output power of at least 100 W in Class AB operation is desired in a compact, rugged package. Read more