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Broadband power amplifier designed for laboratory test applications May 13, 2013Broadband power amplifier designed for laboratory test applications Amplifier Technology has introduced a new broadband power amplifier in standard rack format, designed for laboratory applications. Covering the 500 MHz to 2.5 GHz frequency range, the 8865 rack amplifier meets the needs of laboratory test applications where wide bandwidth, high gain, high linearity and high power are important. Read more GaN on SiC HEMT pulsed power transistor targets L-Band pulsed radar May 6, 2013GaN on SiC HEMT pulsed power transistor targets L-Band pulsed radar M/A-COM Technology Solutions has introduced a GaN on SiC HEMT power transistor for L-Band pulsed radar applications. Read more GaN Systems to use RFMD foundry production March 20, 2013GaN Systems to use RFMD foundry production GaN Systems has announced that production of their GaN on SiC devices would be carried out using RFMD’s GaN on SiC foundry processes. Read more Cree and Acal BFi sign GaN RF franchise agreement February 7, 2013Cree and Acal BFi sign GaN RF franchise agreement Cree and Acal BFI have signed a franchise agreement, to increase the sale of Cree RF components in Italy, Spain, Germany, Poland, Czech Republic, The Netherlands, Norway, Sweden, Hungary and Luxemburg. Read more Latest release of the IC-CAP platform for device characterization and modeling December 20, 2012 Agilent Technologies has announced the latest release of its device modeling software platform, the Integrated Circuit Characterization and Analysis Program (IC-CAP). Read more
TriQuint achieves record GaN reliability performance
S-band RF power transistor for air traffic control radar applications
GaN power transistors provide superior linear performance
30 W DC to 6 GHz GaN on SiC RF power transistors
RFMD unveils multiple GAN-based amplifiers for cable applications
GaN on SiC-based RF transistor targets secondary surveillance radar aviation applications
Richardson RFPD launches the TriQuint GaN Tech Hub
Prototype high efficiency GaN power amplifier on Si substrate targets base stations
Verilog-A RF device models to help GaN adoption in 4G/LTE infrastructure
GaN goes mainstream as costs drop
GaN MMIC amplifier and GaN power transistor pack more power
9-W GaN wideband power amplifier covers 225 MHz to 1215 MHz
High voltage GaN transistors deliver high power
Broadband amplifier covers 0.5 GHZ- 2.5 GHZ for EW and aerospace applications
TriQuint wins $12.3M GaN DARPA contract to develop ultra-fast power switch technology
RF Micro Devices unveils rGaN-HV process technology
30-W, 2.5-6-GHz GaN PA delivers 35% PAE for wide-ranging applications
48-V GaN-on-Si process enables cool high reliablility RF devices
High gain GaN CATV hybrid amplifier features low distortion
GaN wideband power amplifier covers 30 MHz to 2500 MHz
GaN wideband pulsed power amplifier covers 2.8 GHz to 3.4 GHz
18 W GaN on SiC HEMT operates over DC to 6 GHz
RF Micro Devices creates new Compound Semiconductor Group
Amplifier Technology unveils compact, high power broadband pallet amplifiers
Wafer maker joins GaN-on-Si research
GaN power amplifier module that delivers high output and low distortion for CATV applications using the 1-GHz Band
TriQuint demonstrates GaN leadership by achieving key development milestones
Nitronex claims smallest broadband 5-W PA solution
M/A-COM Technology unveils portfolio of GaN-based RF power transistors
Microsemi expands S-band RF power transistor family to embrace high-performance GaN-on-SiC devices
NXP provides live demo of next-generation GaN technology
IMEC makes GaN-on-silicon
100 W broadband high power amplifier features small form factor
Pocket-sized broadband amplifier covers wide 20 MHz to 6.0 GHz range
100-W broadband amplifier operates at 0.5 to 2.5 GHz
Portable GaN amplifier for personal protection covers 2.5 GHz to 6.0 GHz.
TriQuint wins $17.5M GaN manufacturing contract
RF Micro Devices awarded $1.5 million Navy contract for GaN RF power technology
GaN PA is ideal for EW and defense systems
20 W GaN PA offers high power and efficiency
Hybrid power doubler amplifier module delivers power savings and design flexibility for CATV
GaN unmatched power transistor outperforms GaAs and silicon in high power amplifiers
TriQuint names VIPER RF as design resource
TriQuint awarded contract by US Air Force Research Laboratories to develop GaN modules
RFMD® announces qualification of second Gallium Nitride (GaN) process technology
GaN HEMT MMIC power amplifiers expand frequency range through X-band
RFMD expands foundry services to include high power integrated passive technology
Nitronex and Modelithics release enhanced non-linear gallium nitride device model
1.2 GHz broadband products enhance bandwidth-driven services for CATV
GaN-based military RF power amplifier delivers 100 W from 20 to 305 MHz


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