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Cree achieves major milestone with GaN RF production for U.S. Department of Defense October 8, 2014Cree achieves major milestone with GaN RF production for U.S. Department of Defense Cree, Inc., has achieved a major production milestone with its recent accreditation as a U.S. Department of Defense (DoD) Category 1A Trusted Foundry for its 100mm RF GaN facility in Durham, NC. Read more GaN portfolio adds S-Band high power pallet and hybrid amplifiers October 1, 2014GaN portfolio adds S-Band high power pallet and hybrid amplifiers  M/A-COM Technology Solutions has announced a portfolio of surface mount S-Band GaN power products optimized for commercial air traffic control, weather radar and military radar applications. The products are available in a range of packaging options and power levels. Read more 50-V discrete GaN HEMT die operates up to 6 GHz October 1, 201450-V discrete GaN HEMT die operates up to 6 GHz Cree, Inc., has developed a family of 50-V discrete GaN high electron mobility transistor (HEMT) die for operation up to 6 GHz. Read more 2-W GaN driver amp for X-band applications September 29, 20142-W GaN driver amp for X-band applications RFMW, Ltd., has announced design and sales support for a 2-W GaN driver amplifier covering 6 to 12 GHz. Read more 15 W GaN on SiC pulsed power transistor targets radar September 8, 201415 W GaN on SiC pulsed power transistor targets radar M/A-COM Technology Solutions has announced a GaN on SiC HEMT pulsed power transistor for civilian and military radar pulsed applications. Read more
GaN power amplifier covers 28-32 GHz with high linearity
GaN on SiC transistor provides high gain and efficiency for L-Band radar
Process design kit for GaN on SiC
50-V broadband GaN HEMTs offer wide bandwidths
High-gain, 45-W, S-band GaN transistors
90-W GaN avionics power module
Broadband 20 GHz GaN amplifier
Internet of Things to loom large at 2014 International Microwave Symposium
Cree adds four GaN HEMTs for radar to Digi-Key portfolio
MACOM to drive GaN-on-Silicon with IP licensing
GaN on diamond triples power density
12 W GaN power amplifier covers 0.1 to 3.0 GHz
150 W GaN on SiC HEMT power transistor
GaN on SiC HEMT pulsed power transistor targets avionics
Power amplifier doubles efficiency in mobile base stations
GaN transistors offer superior gain, thermal management and efficiency
Surface mount L-Band 90 W GaN power module claims industry first
600 W GaN on SiC Pulsed power transistor delivers high reliability and low pulse droop
750-W GaN on SiC RF power transistor for aviation applications
Cree RF technology stars in Hollywood aerial action sequence
Cree ships more than two million GaN HEMT devices for telecom infrastructure
TriQuint acquires CAP wireless and its Spatium RF power combining technology
Compact high power GaN SSPAs
GaN MMIC power amplifiers deliver up to 25 W
500-W GaN L-Band amplifier ideal for radar applications
GaN HEMT 50 W power transistors qualified for continuous operation at 2.5 GHz
Broadband power amplifier designed for laboratory test applications
GaN on SiC HEMT pulsed power transistor targets L-Band pulsed radar
GaN Systems to use RFMD foundry production
Cree and Acal BFi sign GaN RF franchise agreement
Latest release of the IC-CAP platform for device characterization and modeling
TriQuint achieves record GaN reliability performance
S-band RF power transistor for air traffic control radar applications
GaN power transistors provide superior linear performance
30 W DC to 6 GHz GaN on SiC RF power transistors
RFMD unveils multiple GAN-based amplifiers for cable applications
GaN on SiC-based RF transistor targets secondary surveillance radar aviation applications
Richardson RFPD launches the TriQuint GaN Tech Hub
Prototype high efficiency GaN power amplifier on Si substrate targets base stations
Verilog-A RF device models to help GaN adoption in 4G/LTE infrastructure
GaN goes mainstream as costs drop
GaN MMIC amplifier and GaN power transistor pack more power
9-W GaN wideband power amplifier covers 225 MHz to 1215 MHz
High voltage GaN transistors deliver high power
Broadband amplifier covers 0.5 GHZ- 2.5 GHZ for EW and aerospace applications
TriQuint wins $12.3M GaN DARPA contract to develop ultra-fast power switch technology
RF Micro Devices unveils rGaN-HV process technology
30-W, 2.5-6-GHz GaN PA delivers 35% PAE for wide-ranging applications
48-V GaN-on-Si process enables cool high reliablility RF devices
High gain GaN CATV hybrid amplifier features low distortion
GaN wideband power amplifier covers 30 MHz to 2500 MHz
GaN wideband pulsed power amplifier covers 2.8 GHz to 3.4 GHz
18 W GaN on SiC HEMT operates over DC to 6 GHz
RF Micro Devices creates new Compound Semiconductor Group
Amplifier Technology unveils compact, high power broadband pallet amplifiers
Wafer maker joins GaN-on-Si research
GaN power amplifier module that delivers high output and low distortion for CATV applications using the 1-GHz Band
TriQuint demonstrates GaN leadership by achieving key development milestones
Nitronex claims smallest broadband 5-W PA solution
M/A-COM Technology unveils portfolio of GaN-based RF power transistors
Microsemi expands S-band RF power transistor family to embrace high-performance GaN-on-SiC devices
NXP provides live demo of next-generation GaN technology
IMEC makes GaN-on-silicon
100 W broadband high power amplifier features small form factor
Pocket-sized broadband amplifier covers wide 20 MHz to 6.0 GHz range
100-W broadband amplifier operates at 0.5 to 2.5 GHz
Portable GaN amplifier for personal protection covers 2.5 GHz to 6.0 GHz.
TriQuint wins $17.5M GaN manufacturing contract
RF Micro Devices awarded $1.5 million Navy contract for GaN RF power technology
GaN PA is ideal for EW and defense systems
20 W GaN PA offers high power and efficiency
Hybrid power doubler amplifier module delivers power savings and design flexibility for CATV
GaN unmatched power transistor outperforms GaAs and silicon in high power amplifiers
TriQuint names VIPER RF as design resource
TriQuint awarded contract by US Air Force Research Laboratories to develop GaN modules
RFMD® announces qualification of second Gallium Nitride (GaN) process technology
GaN HEMT MMIC power amplifiers expand frequency range through X-band
RFMD expands foundry services to include high power integrated passive technology
Nitronex and Modelithics release enhanced non-linear gallium nitride device model
1.2 GHz broadband products enhance bandwidth-driven services for CATV
GaN-based military RF power amplifier delivers 100 W from 20 to 305 MHz


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